- 10A, 600V N-CHANNEL MOSFET
- Model:SVF10N60F
- SVF10N60T/F/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
SHOW
10A, 600V N-CHANNEL MOSFET
SVF10N60T/F/S/K
一、GENERAL DESCRIPTION
SVF10N60T/F/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
二、FEATURES
10A,600V,RDS(on)(typ.)=0.75Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
三、Package Information
四、NOMENCLATURE
五、ORDERING INFORMATION
六、ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)